X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE

Y. Pei; C. Poblenz; A. L. Corrion; R. Chu; L. Shen; J. S. Speck; U. K. Mishra

doi:10.1049/el:20080669

X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE

Y. Pei
, C. Poblenz
, A. L. Corrion
, R. Chu
, L. Shen
, J. S. Speck
, U. K. Mishra

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A report is presented on the power performance of deep submicron AlGaN/GaN high electron mobility transistors grown by ammonia molecular beam epitaxy. At 10GHz, 70 power-added-efficiency (PAE) and 3 W/mm power density were demonstrated at a drain bias of 20 V. At 30GHz, 31 PAE and 6.5 W/mm power density were achieved at a drain bias of 40V.

Original language	English (US)
Pages (from-to)	598-599
Number of pages	2
Journal	Electronics Letters
Volume	44
Issue number	9
DOIs	https://doi.org/10.1049/el:20080669
State	Published - 2008

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20080669

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title = "X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE",

abstract = "A report is presented on the power performance of deep submicron AlGaN/GaN high electron mobility transistors grown by ammonia molecular beam epitaxy. At 10GHz, 70 power-added-efficiency (PAE) and 3 W/mm power density were demonstrated at a drain bias of 20 V. At 30GHz, 31 PAE and 6.5 W/mm power density were achieved at a drain bias of 40V.",

author = "Y. Pei and C. Poblenz and Corrion, \{A. L.\} and R. Chu and L. Shen and Speck, \{J. S.\} and Mishra, \{U. K.\}",

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pages = "598--599",

journal = "Electronics Letters",

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T1 - X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE

AU - Pei, Y.

AU - Poblenz, C.

AU - Corrion, A. L.

AU - Chu, R.

AU - Shen, L.

AU - Speck, J. S.

AU - Mishra, U. K.

PY - 2008

Y1 - 2008

N2 - A report is presented on the power performance of deep submicron AlGaN/GaN high electron mobility transistors grown by ammonia molecular beam epitaxy. At 10GHz, 70 power-added-efficiency (PAE) and 3 W/mm power density were demonstrated at a drain bias of 20 V. At 30GHz, 31 PAE and 6.5 W/mm power density were achieved at a drain bias of 40V.

AB - A report is presented on the power performance of deep submicron AlGaN/GaN high electron mobility transistors grown by ammonia molecular beam epitaxy. At 10GHz, 70 power-added-efficiency (PAE) and 3 W/mm power density were demonstrated at a drain bias of 20 V. At 30GHz, 31 PAE and 6.5 W/mm power density were achieved at a drain bias of 40V.

UR - https://www.scopus.com/pages/publications/42449083263

UR - https://www.scopus.com/pages/publications/42449083263#tab=citedBy

U2 - 10.1049/el:20080669

DO - 10.1049/el:20080669

M3 - Article

AN - SCOPUS:42449083263

SN - 0013-5194

VL - 44

SP - 598

EP - 599

JO - Electronics Letters

JF - Electronics Letters

IS - 9

ER -

X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE

Abstract

All Science Journal Classification (ASJC) codes

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