X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride

S. D. Wolter; B. P. Luther; D. L. Waltemyer; C. Önneby; S. E. Mohney; R. J. Molnar

doi:10.1063/1.118944

X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride

S. D. Wolter, B. P. Luther, D. L. Waltemyer, C. Önneby, S. E. Mohney, R. J. Molnar

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Abstract

The oxidation of single crystal gallium nitride in dry air has been investigated. X-ray photoelectron spectroscopy (XPS) revealed minimal oxide growth at 450 and 750°C for up to 25 h. However, at 900°C the growth of an oxide approximately 5000 Å thick was observed after 25 h. This oxide was determined to be the monoclinic β-Ga₂O₃ using glancing angle x-ray diffraction. XPS spectra of the Ga 3d and Ga 2p core levels indicated peak shifts of 1.2 and 1.3 eV, respectively, from Ga-O to Ga-N bonding. The Ga L₃M₄₅M₄₅ core level binding energy was also investigated and β-Ga₂O₃ and GaN each presented a characteristic peak shape.

Original language	English (US)
Pages (from-to)	2156-2158
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	16
DOIs	https://doi.org/10.1063/1.118944
State	Published - Apr 21 1997

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.118944

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title = "X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride",

abstract = "The oxidation of single crystal gallium nitride in dry air has been investigated. X-ray photoelectron spectroscopy (XPS) revealed minimal oxide growth at 450 and 750°C for up to 25 h. However, at 900°C the growth of an oxide approximately 5000 {\AA} thick was observed after 25 h. This oxide was determined to be the monoclinic β-Ga2O3 using glancing angle x-ray diffraction. XPS spectra of the Ga 3d and Ga 2p core levels indicated peak shifts of 1.2 and 1.3 eV, respectively, from Ga-O to Ga-N bonding. The Ga L3M45M45 core level binding energy was also investigated and β-Ga2O3 and GaN each presented a characteristic peak shape.",

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T1 - X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride

AU - Wolter, S. D.

AU - Luther, B. P.

AU - Waltemyer, D. L.

AU - Önneby, C.

AU - Mohney, S. E.

AU - Molnar, R. J.

PY - 1997/4/21

Y1 - 1997/4/21

N2 - The oxidation of single crystal gallium nitride in dry air has been investigated. X-ray photoelectron spectroscopy (XPS) revealed minimal oxide growth at 450 and 750°C for up to 25 h. However, at 900°C the growth of an oxide approximately 5000 Å thick was observed after 25 h. This oxide was determined to be the monoclinic β-Ga2O3 using glancing angle x-ray diffraction. XPS spectra of the Ga 3d and Ga 2p core levels indicated peak shifts of 1.2 and 1.3 eV, respectively, from Ga-O to Ga-N bonding. The Ga L3M45M45 core level binding energy was also investigated and β-Ga2O3 and GaN each presented a characteristic peak shape.

AB - The oxidation of single crystal gallium nitride in dry air has been investigated. X-ray photoelectron spectroscopy (XPS) revealed minimal oxide growth at 450 and 750°C for up to 25 h. However, at 900°C the growth of an oxide approximately 5000 Å thick was observed after 25 h. This oxide was determined to be the monoclinic β-Ga2O3 using glancing angle x-ray diffraction. XPS spectra of the Ga 3d and Ga 2p core levels indicated peak shifts of 1.2 and 1.3 eV, respectively, from Ga-O to Ga-N bonding. The Ga L3M45M45 core level binding energy was also investigated and β-Ga2O3 and GaN each presented a characteristic peak shape.

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X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride

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