X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

K. A. Rickert; A. B. Ellis; F. J. Himpsel; H. Lu; W. Schaff; J. M. Redwing; F. Dwikusuma; T. F. Kuech

doi:10.1063/1.1573351

X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

K. A. Rickert, A. B. Ellis, F. J. Himpsel, H. Lu, W. Schaff, J. M. Redwing, F. Dwikusuma, T. F. Kuech

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Abstract

The effects of surface treatments, metal deposition and electron accumulation on InN were studied. Au deposited on annealed InN yielded a Fermi level 0.7 eV above the valence band maximum and Ti deposited on sputtered InN yielded a Fermi level 1.2 eV above the valence band maximum. The results suggested that if the smaller value of the band gap for InN was assumed, then none of the metal forms a Schottky barrier on InN.

Original language	English (US)
Pages (from-to)	3254-3256
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	19
DOIs	https://doi.org/10.1063/1.1573351
State	Published - May 12 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1573351

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title = "X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN",

abstract = "The effects of surface treatments, metal deposition and electron accumulation on InN were studied. Au deposited on annealed InN yielded a Fermi level 0.7 eV above the valence band maximum and Ti deposited on sputtered InN yielded a Fermi level 1.2 eV above the valence band maximum. The results suggested that if the smaller value of the band gap for InN was assumed, then none of the metal forms a Schottky barrier on InN.",

author = "Rickert, {K. A.} and Ellis, {A. B.} and Himpsel, {F. J.} and H. Lu and W. Schaff and Redwing, {J. M.} and F. Dwikusuma and Kuech, {T. F.}",

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month = may,

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doi = "10.1063/1.1573351",

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volume = "82",

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T1 - X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

AU - Rickert, K. A.

AU - Ellis, A. B.

AU - Himpsel, F. J.

AU - Lu, H.

AU - Schaff, W.

AU - Redwing, J. M.

AU - Dwikusuma, F.

AU - Kuech, T. F.

PY - 2003/5/12

Y1 - 2003/5/12

N2 - The effects of surface treatments, metal deposition and electron accumulation on InN were studied. Au deposited on annealed InN yielded a Fermi level 0.7 eV above the valence band maximum and Ti deposited on sputtered InN yielded a Fermi level 1.2 eV above the valence band maximum. The results suggested that if the smaller value of the band gap for InN was assumed, then none of the metal forms a Schottky barrier on InN.

AB - The effects of surface treatments, metal deposition and electron accumulation on InN were studied. Au deposited on annealed InN yielded a Fermi level 0.7 eV above the valence band maximum and Ti deposited on sputtered InN yielded a Fermi level 1.2 eV above the valence band maximum. The results suggested that if the smaller value of the band gap for InN was assumed, then none of the metal forms a Schottky barrier on InN.

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U2 - 10.1063/1.1573351

DO - 10.1063/1.1573351

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VL - 82

SP - 3254

EP - 3256

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

Abstract

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