@inproceedings{336bf9ed9f5a4fd7af396692d0bcc609,
title = "Xe implantation in SiO2: Low-k applications",
abstract = "SiO2 samples were implanted with 300 keV xenon at various doses: 0.5 to 521016 Xe/cm2. Asimplanted samples show that nm-size precipitates are created for these doses while bubble formation needs doses higher than 1016 Xe/cm2. Thermal annealing at 750°C results in the disappearance of nano-precipitates while bubbles/cavities remain stable even after annealing at 1100°C. Capacitance-voltage (C-V) measurements clearly indicate a strong decrease of the dielectric constant (k), consistent with bubble/cavity formation in SiO 2.",
author = "E. Ntsoenzok and H. Assaf and Ruault, {M. O.} and S Ashok",
year = "2007",
month = aug,
day = "2",
doi = "10.1109/ICSICT.2006.306211",
language = "English (US)",
isbn = "1424401615",
series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
pages = "295--297",
booktitle = "ICSICT-2006",
note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",
}