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Yellow photoluminescence in MOCVD-grown n-type GaN
E. F. Schubert
, W. Grieshaber
, K. S. Boutros
,
J. M. Redwing
Materials Science and Engineering
Materials Research Institute (MRI)
Research output
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›
peer-review
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Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
N-type GaN
100%
Excitation Density
100%
Yellow Luminescence
100%
Band Gap
28%
High Excitation
28%
Photoluminescence
14%
Luminescence
14%
Luminescence Intensity
14%
Microcavity
14%
Power Law
14%
Semiconductors
14%
Defect Concentration
14%
Doping Concentration
14%
Defect Levels
14%
Square Root
14%
Optical Transitions
14%
Linear Dependence
14%
Semiconductor Substrate
14%
Free Carrier Concentration
14%
Air Interface
14%
Radiative Transition
14%
PL Spectra
14%
Intensity Modulation
14%
Chemistry
Metallorganic Chemical Vapor Deposition
100%
Band Gap
100%
Photoluminescence
100%
Optical Transition
50%
Deep Defect Level
50%
Radiative Transition
50%
Photoluminescence Spectrum
50%
Material Science
Density
100%
Photoluminescence
100%
Luminescence
57%
Physics
Photoluminescence
100%
Theoretical Model
50%
Optical Transition
50%
Intensity Modulation
50%