Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB

Corey J. Cochrane; Patrick M. Lenahan

doi:10.1109/IIRW.2013.6804165

Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB

Corey J. Cochrane, Patrick M. Lenahan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

This work focuses on the use of a zero- and low-field detection technique of spin dependent recombination and spin dependent tunneling used for studying the bias temperature instabilities in MOSFETs and time dependent dielectric breakdown in this film dielectrics.

Original language	English (US)
Title of host publication	2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	88-89
Number of pages	2
ISBN (Print)	9781479903504
DOIs	https://doi.org/10.1109/IIRW.2013.6804165
State	Published - 2013
Event	2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 - South Lake Tahoe, CA, United States Duration: Oct 13 2013 → Oct 17 2013

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report

Other

Other	2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
Country/Territory	United States
City	South Lake Tahoe, CA
Period	10/13/13 → 10/17/13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IIRW.2013.6804165

Cite this

Cochrane, C. J., & Lenahan, P. M. (2013). Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB. In 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 (pp. 88-89). Article 6804165 (IEEE International Integrated Reliability Workshop Final Report). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW.2013.6804165

@inproceedings{d8f32a6bcd804a3bb541c0e8aaf35131,

title = "Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB",

abstract = "This work focuses on the use of a zero- and low-field detection technique of spin dependent recombination and spin dependent tunneling used for studying the bias temperature instabilities in MOSFETs and time dependent dielectric breakdown in this film dielectrics.",

author = "Cochrane, {Corey J.} and Lenahan, {Patrick M.}",

year = "2013",

doi = "10.1109/IIRW.2013.6804165",

language = "English (US)",

isbn = "9781479903504",

series = "IEEE International Integrated Reliability Workshop Final Report",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "88--89",

booktitle = "2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013",

address = "United States",

note = "2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 ; Conference date: 13-10-2013 Through 17-10-2013",

}

Cochrane, CJ & Lenahan, PM 2013, Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB. in 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013., 6804165, IEEE International Integrated Reliability Workshop Final Report, Institute of Electrical and Electronics Engineers Inc., pp. 88-89, 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013, South Lake Tahoe, CA, United States, 10/13/13. https://doi.org/10.1109/IIRW.2013.6804165

Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB. / Cochrane, Corey J.; Lenahan, Patrick M.
2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 88-89 6804165 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB

AU - Cochrane, Corey J.

AU - Lenahan, Patrick M.

PY - 2013

Y1 - 2013

N2 - This work focuses on the use of a zero- and low-field detection technique of spin dependent recombination and spin dependent tunneling used for studying the bias temperature instabilities in MOSFETs and time dependent dielectric breakdown in this film dielectrics.

AB - This work focuses on the use of a zero- and low-field detection technique of spin dependent recombination and spin dependent tunneling used for studying the bias temperature instabilities in MOSFETs and time dependent dielectric breakdown in this film dielectrics.

UR - http://www.scopus.com/inward/record.url?scp=84900494136&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84900494136&partnerID=8YFLogxK

U2 - 10.1109/IIRW.2013.6804165

DO - 10.1109/IIRW.2013.6804165

M3 - Conference contribution

AN - SCOPUS:84900494136

SN - 9781479903504

T3 - IEEE International Integrated Reliability Workshop Final Report

SP - 88

EP - 89

BT - 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013

Y2 - 13 October 2013 through 17 October 2013

ER -

Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB

Abstract

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Other

All Science Journal Classification (ASJC) codes

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