ZnO thin-film transistor ring oscillators with 31-ns propagation delay

Jie Sun; Devin A. Mourey; Dalong Zhao; Sung Kyu Park; Shelby F. Nelson; David H. Levy; Diane Freeman; Peter Cowdery-Corvan; Lee Tutt; Thomas N. Jackson

doi:10.1109/LED.2008.923206

ZnO thin-film transistor ring oscillators with 31-ns propagation delay

Jie Sun, Devin A. Mourey, Dalong Zhao, Sung Kyu Park, Shelby F. Nelson, David H. Levy, Diane Freeman, Peter Cowdery-Corvan, Lee Tutt, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

We have fabricated ring oscillators (ROs) using ZnO thin films deposited by using a spatial atomic layer deposition process at atmospheric pressure and low temperature (200 °C). Bottom-gate thin-film transistors with aluminum source and drain contacts were fabricated with a field-effect mobility of > 15 cm₂/V · s. Seven-stage ROs operated at a frequency as high as 2.3 MHz for a supply voltage of 25 V, corresponding to a propagation delay of 31 ns/stage. These circuits also had propagation delays of ∼ 100 ns/stage at a supply voltage of 15 V. To the best of our knowledge, these are the fastest ZnO circuits reported to date.

Original language	English (US)
Pages (from-to)	721-723
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	7
DOIs	https://doi.org/10.1109/LED.2008.923206
State	Published - Jul 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.923206

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abstract = "We have fabricated ring oscillators (ROs) using ZnO thin films deposited by using a spatial atomic layer deposition process at atmospheric pressure and low temperature (200 °C). Bottom-gate thin-film transistors with aluminum source and drain contacts were fabricated with a field-effect mobility of > 15 cm2/V · s. Seven-stage ROs operated at a frequency as high as 2.3 MHz for a supply voltage of 25 V, corresponding to a propagation delay of 31 ns/stage. These circuits also had propagation delays of ∼ 100 ns/stage at a supply voltage of 15 V. To the best of our knowledge, these are the fastest ZnO circuits reported to date.",

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AU - Sun, Jie

AU - Mourey, Devin A.

AU - Zhao, Dalong

AU - Park, Sung Kyu

AU - Nelson, Shelby F.

AU - Levy, David H.

AU - Freeman, Diane

AU - Cowdery-Corvan, Peter

AU - Tutt, Lee

AU - Jackson, Thomas N.

PY - 2008/7

Y1 - 2008/7

N2 - We have fabricated ring oscillators (ROs) using ZnO thin films deposited by using a spatial atomic layer deposition process at atmospheric pressure and low temperature (200 °C). Bottom-gate thin-film transistors with aluminum source and drain contacts were fabricated with a field-effect mobility of > 15 cm2/V · s. Seven-stage ROs operated at a frequency as high as 2.3 MHz for a supply voltage of 25 V, corresponding to a propagation delay of 31 ns/stage. These circuits also had propagation delays of ∼ 100 ns/stage at a supply voltage of 15 V. To the best of our knowledge, these are the fastest ZnO circuits reported to date.

AB - We have fabricated ring oscillators (ROs) using ZnO thin films deposited by using a spatial atomic layer deposition process at atmospheric pressure and low temperature (200 °C). Bottom-gate thin-film transistors with aluminum source and drain contacts were fabricated with a field-effect mobility of > 15 cm2/V · s. Seven-stage ROs operated at a frequency as high as 2.3 MHz for a supply voltage of 25 V, corresponding to a propagation delay of 31 ns/stage. These circuits also had propagation delays of ∼ 100 ns/stage at a supply voltage of 15 V. To the best of our knowledge, these are the fastest ZnO circuits reported to date.

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ZnO thin-film transistor ring oscillators with 31-ns propagation delay

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