ZnO thin film transistor ring oscillators with sub 75 nsec propagation delay

Jie Sun; Devin A. Mourey; Dalong Zhao; Sung Kyu Park; Shelby F. Nelson; David H. Levy; Diane Freeman; Peter Cowdery-Corvan; Lee Tutt; Thomas Nelson Jackson

doi:10.1109/IEDM.2007.4419005

ZnO thin film transistor ring oscillators with sub 75 nsec propagation delay

Jie Sun, Devin A. Mourey, Dalong Zhao, Sung Kyu Park, Shelby F. Nelson, David H. Levy, Diane Freeman, Peter Cowdery-Corvan, Lee Tutt, Thomas Nelson Jackson

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We have fabricated simple circuits, including ring oscillators, using ZnO thin films deposited by low temperature (200°C) atmospheric pressure chemical vapor deposition. Bottom gate TFTs with aluminum source and drain contacts typically had field effect mobility >15 cm²/V·s. Seven stage ring oscillators operated at frequency as high as 1 MHz for a supply voltage of 32 V, corresponding to a propagation delay less than 75 nsec/stage. These circuits also had propagation delay less than 150 ns/stage at a supply voltage of 18 V. To our knowledge, these are the fastest ZnO circuits reported to date.

Original language	English (US)
Article number	4419005
Pages (from-to)	579-582
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4419005
State	Published - 2007
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: Dec 10 2007 → Dec 12 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2007.4419005

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title = "ZnO thin film transistor ring oscillators with sub 75 nsec propagation delay",

abstract = "We have fabricated simple circuits, including ring oscillators, using ZnO thin films deposited by low temperature (200°C) atmospheric pressure chemical vapor deposition. Bottom gate TFTs with aluminum source and drain contacts typically had field effect mobility >15 cm2/V·s. Seven stage ring oscillators operated at frequency as high as 1 MHz for a supply voltage of 32 V, corresponding to a propagation delay less than 75 nsec/stage. These circuits also had propagation delay less than 150 ns/stage at a supply voltage of 18 V. To our knowledge, these are the fastest ZnO circuits reported to date.",

author = "Jie Sun and Mourey, {Devin A.} and Dalong Zhao and Park, {Sung Kyu} and Nelson, {Shelby F.} and Levy, {David H.} and Diane Freeman and Peter Cowdery-Corvan and Lee Tutt and Jackson, {Thomas Nelson}",

year = "2007",

doi = "10.1109/IEDM.2007.4419005",

language = "English (US)",

pages = "579--582",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

}

TY - JOUR

T1 - ZnO thin film transistor ring oscillators with sub 75 nsec propagation delay

AU - Sun, Jie

AU - Mourey, Devin A.

AU - Zhao, Dalong

AU - Park, Sung Kyu

AU - Nelson, Shelby F.

AU - Levy, David H.

AU - Freeman, Diane

AU - Cowdery-Corvan, Peter

AU - Tutt, Lee

AU - Jackson, Thomas Nelson

PY - 2007

Y1 - 2007

N2 - We have fabricated simple circuits, including ring oscillators, using ZnO thin films deposited by low temperature (200°C) atmospheric pressure chemical vapor deposition. Bottom gate TFTs with aluminum source and drain contacts typically had field effect mobility >15 cm2/V·s. Seven stage ring oscillators operated at frequency as high as 1 MHz for a supply voltage of 32 V, corresponding to a propagation delay less than 75 nsec/stage. These circuits also had propagation delay less than 150 ns/stage at a supply voltage of 18 V. To our knowledge, these are the fastest ZnO circuits reported to date.

AB - We have fabricated simple circuits, including ring oscillators, using ZnO thin films deposited by low temperature (200°C) atmospheric pressure chemical vapor deposition. Bottom gate TFTs with aluminum source and drain contacts typically had field effect mobility >15 cm2/V·s. Seven stage ring oscillators operated at frequency as high as 1 MHz for a supply voltage of 32 V, corresponding to a propagation delay less than 75 nsec/stage. These circuits also had propagation delay less than 150 ns/stage at a supply voltage of 18 V. To our knowledge, these are the fastest ZnO circuits reported to date.

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DO - 10.1109/IEDM.2007.4419005

M3 - Conference article

AN - SCOPUS:50249085441

SN - 0163-1918

SP - 579

EP - 582

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

M1 - 4419005

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

ZnO thin film transistor ring oscillators with sub 75 nsec propagation delay

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