ZnO thin film transistor ring oscillators with sub 75 nsec propagation delay

Jie Sun; Devin A. Mourey; Dalong Zhao; Sung Kyu Park; Shelby F. Nelson; David H. Levy; Diane Freeman; Peter Cowdery-Corvan; Lee Tutt; Thomas Nelson Jackson

doi:10.1109/IEDM.2007.4419005

ZnO thin film transistor ring oscillators with sub 75 nsec propagation delay

Jie Sun
, Devin A. Mourey
, Dalong Zhao
, Sung Kyu Park
, Shelby F. Nelson
, David H. Levy
, Diane Freeman
, Peter Cowdery-Corvan
, Lee Tutt
, Thomas Nelson Jackson

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We have fabricated simple circuits, including ring oscillators, using ZnO thin films deposited by low temperature (200°C) atmospheric pressure chemical vapor deposition. Bottom gate TFTs with aluminum source and drain contacts typically had field effect mobility >15 cm²/V·s. Seven stage ring oscillators operated at frequency as high as 1 MHz for a supply voltage of 32 V, corresponding to a propagation delay less than 75 nsec/stage. These circuits also had propagation delay less than 150 ns/stage at a supply voltage of 18 V. To our knowledge, these are the fastest ZnO circuits reported to date.

Original language	English (US)
Article number	4419005
Pages (from-to)	579-582
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4419005
State	Published - 2007
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: Dec 10 2007 → Dec 12 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2007.4419005

Cite this

@article{c9e50478de32491dbc386587718b4621,

title = "ZnO thin film transistor ring oscillators with sub 75 nsec propagation delay",

abstract = "We have fabricated simple circuits, including ring oscillators, using ZnO thin films deposited by low temperature (200°C) atmospheric pressure chemical vapor deposition. Bottom gate TFTs with aluminum source and drain contacts typically had field effect mobility >15 cm2/V·s. Seven stage ring oscillators operated at frequency as high as 1 MHz for a supply voltage of 32 V, corresponding to a propagation delay less than 75 nsec/stage. These circuits also had propagation delay less than 150 ns/stage at a supply voltage of 18 V. To our knowledge, these are the fastest ZnO circuits reported to date.",

author = "Jie Sun and Mourey, \{Devin A.\} and Dalong Zhao and Park, \{Sung Kyu\} and Nelson, \{Shelby F.\} and Levy, \{David H.\} and Diane Freeman and Peter Cowdery-Corvan and Lee Tutt and Jackson, \{Thomas Nelson\}",

year = "2007",

doi = "10.1109/IEDM.2007.4419005",

language = "English (US)",

pages = "579--582",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

}

TY - JOUR

T1 - ZnO thin film transistor ring oscillators with sub 75 nsec propagation delay

AU - Sun, Jie

AU - Mourey, Devin A.

AU - Zhao, Dalong

AU - Park, Sung Kyu

AU - Nelson, Shelby F.

AU - Levy, David H.

AU - Freeman, Diane

AU - Cowdery-Corvan, Peter

AU - Tutt, Lee

AU - Jackson, Thomas Nelson

PY - 2007

Y1 - 2007

N2 - We have fabricated simple circuits, including ring oscillators, using ZnO thin films deposited by low temperature (200°C) atmospheric pressure chemical vapor deposition. Bottom gate TFTs with aluminum source and drain contacts typically had field effect mobility >15 cm2/V·s. Seven stage ring oscillators operated at frequency as high as 1 MHz for a supply voltage of 32 V, corresponding to a propagation delay less than 75 nsec/stage. These circuits also had propagation delay less than 150 ns/stage at a supply voltage of 18 V. To our knowledge, these are the fastest ZnO circuits reported to date.

AB - We have fabricated simple circuits, including ring oscillators, using ZnO thin films deposited by low temperature (200°C) atmospheric pressure chemical vapor deposition. Bottom gate TFTs with aluminum source and drain contacts typically had field effect mobility >15 cm2/V·s. Seven stage ring oscillators operated at frequency as high as 1 MHz for a supply voltage of 32 V, corresponding to a propagation delay less than 75 nsec/stage. These circuits also had propagation delay less than 150 ns/stage at a supply voltage of 18 V. To our knowledge, these are the fastest ZnO circuits reported to date.

UR - https://www.scopus.com/pages/publications/50249085441

UR - https://www.scopus.com/pages/publications/50249085441#tab=citedBy

U2 - 10.1109/IEDM.2007.4419005

DO - 10.1109/IEDM.2007.4419005

M3 - Conference article

AN - SCOPUS:50249085441

SN - 0163-1918

SP - 579

EP - 582

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

M1 - 4419005

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

ZnO thin film transistor ring oscillators with sub 75 nsec propagation delay

Abstract

All Science Journal Classification (ASJC) codes

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