Abstract
We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates at 200 °C. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal coatings and enhancement-mode MOSFETs from uncompensated films. Our PEALD ZnO TFTs have field-effect mobility of 20-30 cm2/V s and simple gate-self-aligned saturated-load ring oscillators on glass with 2.5 μm gate length had propagation delay <10 ns/stage at VDD = 18 V. We also report the fastest oxide semiconductor circuits on polyimide substrates with propagation delay of ~60 ns/stage at VDD = 18 V.
Original language | English (US) |
---|---|
Title of host publication | 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest |
DOIs | |
State | Published - Dec 1 2009 |
Event | 2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: Dec 7 2009 → Dec 9 2009 |
Other
Other | 2009 International Electron Devices Meeting, IEDM 2009 |
---|---|
Country/Territory | United States |
City | Baltimore, MD |
Period | 12/7/09 → 12/9/09 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry