ZnO thin film transistors and circuits on glass and polyimide by low-temperature PEALD

Devin A. Mourey; Dalong A. Zhao; Thomas Nelson Jackson

doi:10.1109/IEDM.2009.5424388

ZnO thin film transistors and circuits on glass and polyimide by low-temperature PEALD

Devin A. Mourey
, Dalong A. Zhao
, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates at 200 °C. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal coatings and enhancement-mode MOSFETs from uncompensated films. Our PEALD ZnO TFTs have field-effect mobility of 20-30 cm²/V s and simple gate-self-aligned saturated-load ring oscillators on glass with 2.5 μm gate length had propagation delay <10 ns/stage at V_DD = 18 V. We also report the fastest oxide semiconductor circuits on polyimide substrates with propagation delay of ~60 ns/stage at V_DD = 18 V.

Original language	English (US)
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
DOIs	https://doi.org/10.1109/IEDM.2009.5424388
State	Published - Dec 1 2009
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: Dec 7 2009 → Dec 9 2009

Other

Other	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	12/7/09 → 12/9/09

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2009.5424388

Cite this

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title = "ZnO thin film transistors and circuits on glass and polyimide by low-temperature PEALD",

abstract = "We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates at 200 °C. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal coatings and enhancement-mode MOSFETs from uncompensated films. Our PEALD ZnO TFTs have field-effect mobility of 20-30 cm2/V s and simple gate-self-aligned saturated-load ring oscillators on glass with 2.5 μm gate length had propagation delay <10 ns/stage at VDD = 18 V. We also report the fastest oxide semiconductor circuits on polyimide substrates with propagation delay of \textasciitilde{}60 ns/stage at VDD = 18 V.",

author = "Mourey, \{Devin A.\} and Zhao, \{Dalong A.\} and Jackson, \{Thomas Nelson\}",

year = "2009",

month = dec,

day = "1",

doi = "10.1109/IEDM.2009.5424388",

language = "English (US)",

isbn = "9781424456406",

booktitle = "2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest",

note = "2009 International Electron Devices Meeting, IEDM 2009 ; Conference date: 07-12-2009 Through 09-12-2009",

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T1 - ZnO thin film transistors and circuits on glass and polyimide by low-temperature PEALD

AU - Mourey, Devin A.

AU - Zhao, Dalong A.

AU - Jackson, Thomas Nelson

PY - 2009/12/1

Y1 - 2009/12/1

N2 - We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates at 200 °C. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal coatings and enhancement-mode MOSFETs from uncompensated films. Our PEALD ZnO TFTs have field-effect mobility of 20-30 cm2/V s and simple gate-self-aligned saturated-load ring oscillators on glass with 2.5 μm gate length had propagation delay <10 ns/stage at VDD = 18 V. We also report the fastest oxide semiconductor circuits on polyimide substrates with propagation delay of ~60 ns/stage at VDD = 18 V.

AB - We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates at 200 °C. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal coatings and enhancement-mode MOSFETs from uncompensated films. Our PEALD ZnO TFTs have field-effect mobility of 20-30 cm2/V s and simple gate-self-aligned saturated-load ring oscillators on glass with 2.5 μm gate length had propagation delay <10 ns/stage at VDD = 18 V. We also report the fastest oxide semiconductor circuits on polyimide substrates with propagation delay of ~60 ns/stage at VDD = 18 V.

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UR - https://www.scopus.com/pages/publications/77952374210#tab=citedBy

U2 - 10.1109/IEDM.2009.5424388

DO - 10.1109/IEDM.2009.5424388

M3 - Conference contribution

AN - SCOPUS:77952374210

SN - 9781424456406

BT - 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest

T2 - 2009 International Electron Devices Meeting, IEDM 2009

Y2 - 7 December 2009 through 9 December 2009

ER -

ZnO thin film transistors and circuits on glass and polyimide by low-temperature PEALD

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