ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor

J. Israel Ramirez; Yuanyuan V. Li; Dalong A. Zhao; Thomas N. Jackson

doi:10.1109/ISDRS.2011.6135265

ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor

J. Israel Ramirez, Yuanyuan V. Li, Dalong A. Zhao, Thomas N. Jackson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al ₂O ₃ deposited at low temperature (200C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation [1]. We also reported the use of thin, weak oxidant, PEALD Al ₂O ₃ films as gate insulator for scaled III-V MOSFETs [2]. In this work, we report TFTs fabricated using ZnO and Al ₂O ₃ deposited in a novel weak oxidant PEALD reactor using a showerhead to dispense the reactant gases and an integrated load-lock.

Original language	English (US)
Title of host publication	2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs	https://doi.org/10.1109/ISDRS.2011.6135265
State	Published - 2011
Event	2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States Duration: Dec 7 2011 → Dec 9 2011

Publication series

Name	2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other	2011 International Semiconductor Device Research Symposium, ISDRS 2011
Country/Territory	United States
City	College Park, MD
Period	12/7/11 → 12/9/11

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ISDRS.2011.6135265

Cite this

Ramirez, J. I., Li, Y. V., Zhao, D. A., & Jackson, T. N. (2011). ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 Article 6135265 (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135265

@inproceedings{5f97aaaaeb634e8ea89889ac7af19525,

title = "ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor",

abstract = "Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al 2O 3 deposited at low temperature (200C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation [1]. We also reported the use of thin, weak oxidant, PEALD Al 2O 3 films as gate insulator for scaled III-V MOSFETs [2]. In this work, we report TFTs fabricated using ZnO and Al 2O 3 deposited in a novel weak oxidant PEALD reactor using a showerhead to dispense the reactant gases and an integrated load-lock.",

author = "Ramirez, {J. Israel} and Li, {Yuanyuan V.} and Zhao, {Dalong A.} and Jackson, {Thomas N.}",

year = "2011",

doi = "10.1109/ISDRS.2011.6135265",

language = "English (US)",

isbn = "9781457717550",

series = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",

booktitle = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",

note = "2011 International Semiconductor Device Research Symposium, ISDRS 2011 ; Conference date: 07-12-2011 Through 09-12-2011",

}

Ramirez, JI, Li, YV, Zhao, DA & Jackson, TN 2011, ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135265, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 12/7/11. https://doi.org/10.1109/ISDRS.2011.6135265

ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor. / Ramirez, J. Israel; Li, Yuanyuan V.; Zhao, Dalong A. et al.
2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135265 (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor

AU - Ramirez, J. Israel

AU - Li, Yuanyuan V.

AU - Zhao, Dalong A.

AU - Jackson, Thomas N.

PY - 2011

Y1 - 2011

N2 - Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al 2O 3 deposited at low temperature (200C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation [1]. We also reported the use of thin, weak oxidant, PEALD Al 2O 3 films as gate insulator for scaled III-V MOSFETs [2]. In this work, we report TFTs fabricated using ZnO and Al 2O 3 deposited in a novel weak oxidant PEALD reactor using a showerhead to dispense the reactant gases and an integrated load-lock.

AB - Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al 2O 3 deposited at low temperature (200C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation [1]. We also reported the use of thin, weak oxidant, PEALD Al 2O 3 films as gate insulator for scaled III-V MOSFETs [2]. In this work, we report TFTs fabricated using ZnO and Al 2O 3 deposited in a novel weak oxidant PEALD reactor using a showerhead to dispense the reactant gases and an integrated load-lock.

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U2 - 10.1109/ISDRS.2011.6135265

DO - 10.1109/ISDRS.2011.6135265

M3 - Conference contribution

AN - SCOPUS:84863155766

SN - 9781457717550

T3 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

T2 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

Y2 - 7 December 2011 through 9 December 2011

ER -

ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor

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