ZnO thin film transistors for more than just displays

Haoyu U. Li, J. Israel Ramirez, Kaige G. Sun, Yiyang Gong, Yuanyuan V. Li, Thomas N. Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We have fabricated ZnO thin film transistors (TFTs) on rigid and flexible substrates with characteristics well suited for displays and more general microelectronic applications. Using weak-reactant plasma enhanced atomic layer deposition (PEALD) we have fabricated single-gate, double-gate, and trilayer ZnO TFTs with good performance and stability. We have also fabricated TFTs and circuits on thin (few μm thick) solution-cast polymeric substrates that can be flexed to small radius for thousands of cycles.

Original languageEnglish (US)
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages19.6.1-19.6.4
ISBN (Electronic)9781467398930
DOIs
StatePublished - Feb 16 2015
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: Dec 7 2015Dec 9 2015

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
Country/TerritoryUnited States
CityWashington
Period12/7/1512/9/15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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